Part Number: 1N149
1N149General Purpose UHF/MW Mixer Diode
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- Specifications
- Zm (test):400
Test Freq:9.4G
Band:X
Semiconductor Material:Silicon
Burnout Abs Max.:2.0
If Imped. Min:325
If Imped. Max.:475
NR Max.:1.5
Noise Figure Max. (dB):8.3
Inp VSWR Max.:1.5
Power In (test):1.0m
R(load) (Ohms):100
Maximum Conversion Loss (dB):5.5



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