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Part Number: 2N3055


pad2N3055

High Power NPN Transistor. General-purpose Switching And Amplifier Application. Vceo = 60Vdc - Vcer = 70Vdc - Vcb = 100Vdc - Veb = 15Vdc - Ic = 7Adc - Ib = 7Adc - PD = 115W.


Price: $ 0.46padSpecial: $ 0.37
Quantity to Order:
Specifications
Military/High-Rel:NV(BR)CEO (V):60V(BR)CBO (V):100I(C) Max. (A):15Absolute Max. Power Diss. (W):115#Maximum Operating Temp (øC):200#I(CBO) Max. (A):5.0m÷@V(CBO) (V) (Test Condition):100V(CE)sat Max. (V):8.0@I(C) (A) (Test Condition):10@I(B) (A) (Test Condition):3.3h(FE) Min. Current gain.:20h(FE) Max. Current gain.:70@I(C) (A) (Test Condition):4.0@V(CE) (V) (Test Condition):4.0f(T) Min. (Hz) Transition Freq:10k@I(C) (A) (Test Condition):1.0@V(CE) (V) (Test Condition):4.0t(s) Max. (s) Storage time.:700nÂt(f) Max. (s) Fall time.:300nÂPackage Style:TO-3Mounting Style:TJunction Temperatureò



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