Part Number: 2N3906


pad2N3906

General Purpose Transistor. Collector-emitter Voltage: Vceo = -40V. Collector-base Voltage: Vcbo = -40V. Collector Dissipation: Pc(max) = -625mW.


Price: $ 0.07padSpecial: $ 0.06
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Specifications
Military/High-Rel:NV(BR)CEO (V):40V(BR)CBO (V):40I(C) Max. (A):200mAbsolute Max. Power Diss. (W):350mMaximum Operating Temp (øC):150õI(CBO) Max. (A):50n÷@V(CBO) (V) (Test Condition):30h(FE) Min. Current gain.:100h(FE) Max. Current gain.:300@I(C) (A) (Test Condition):10m@V(CE) (V) (Test Condition):1.0f(T) Min. (Hz) Transition Freq:250M@I(C) (A) (Test Condition):10m@V(CE) (V) (Test Condition):20V(CE)sat Max. (V):.40@I(C) (A) (Test Condition):50m@I(B) (A) (Test Condition):5.0mh(fe) Min. SS Current gain.:2.5@I(C) (A) (Test Condition):10m@V(CE) (V) (Test Condition):20@Freq. (Hz) (Test Condition):100Mt(d) Max. (s) Delay time.:35nt(r) Max. (s) Rise time:35nt(s) Max. (s) Storage time.:225nt(f) Max. (s) Fall time.:75nPackage Style:TO-92Mounting Style:TNot at Breakdown Voltageë



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