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Part Number: 2N6075B


2N6075B

Sensitive Gate Triac. Silicon Bidirectional Thyristor. 4 A RMS. Peak Repetitive Off-state Voltage 600 V.


Price: $ 2.49padSpecial: $ 1.99
Quantity to Order:
Specifications
V(DRM) Max. (V):600I(T(RMS)) Max. (A):4.0@Temp. (øC) (Test Condition):85#I(TSM) Max. (A):30Î@ t(w) (s) (Test Condition):16mI(GT) Max. (A):15mV(GT) Max.(V):2.5I(H) Max. (A) Holding Current:30mI(D) Max. (A) Leakage Current:2.0m@Temp. (øC) (Test Condition):110õV(T) Max. (V):2.0@I(T) (A) (Test Condition):6.0dv/dt(c) Min. (V/us):5.0ÂMinimum Operating Temp (øC):-40Maximum Operating Temp (øC):110õPackage Style:TO-126Mounting Style:TICEX÷



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