Part Number: 2N6109


2N6109

EPITAXIAL-BASE - SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS


Price: $ 8.25padSpecial: $ 6.60
Quantity to Order:
Specifications
Military/High-Rel:NV(BR)CEO (V):50V(BR)CBO (V):60I(C) Max. (A):7.0Absolute Max. Power Diss. (W):40#Maximum Operating Temp (øC):150õI(CBO) Max. (A):1.0m°@V(CBO) (V) (Test Condition):40V(CE)sat Max. (V):3.5@I(C) (A) (Test Condition):7.0@I(B) (A) (Test Condition):3.0h(FE) Min. Current gain.:30h(FE) Max. Current gain.:150@I(C) (A) (Test Condition):2.5@V(CE) (V) (Test Condition):4.0f(T) Min. (Hz) Transition Freq:10M@I(C) (A) (Test Condition):500m@V(CE) (V) (Test Condition):4.0Package Style:TO-220ABMounting Style:TDC hFEŸ



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