HOME | CATALOG | CART |CONTACT US | DIODES | TRANSISTORS | OPTOELECTORNICS 

Part Number: 2N6248


2N6248

Epitaxial-base - Silicon P-N-P High-power Transistor. -110V - 125W.


Price: $ 15.00padSpecial: $ 12.00
Quantity to Order:
Specifications
Military/High-Rel:NV(BR)CEO (V):110ãV(BR)CBO (V):110I(C) Max. (A):10Absolute Max. Power Diss. (W):125#Maximum Operating Temp (øC):200õI(CBO) Max. (A):1.0m°@V(CBO) (V) (Test Condition):50V(CE)sat Max. (V):3.5@I(C) (A) (Test Condition):10@I(B) (A) (Test Condition):4.0h(FE) Min. Current gain.:20h(FE) Max. Current gain.:100@I(C) (A) (Test Condition):5.0@V(CE) (V) (Test Condition):4.0f(T) Min. (Hz) Transition Freq:10M@I(C) (A) (Test Condition):1.0@V(CE) (V) (Test Condition):4.0Package Style:TO-3Mounting Style:TBVCES or Punch throughº



Go Up to the Silicon PNP Power Transistors Page.

Can't Find It In our Catalog?

Only 10% of our inventory is available for online purchase! If you can't locate it in the catalog, try using our Search Engine, or give us a call at (973) 377-9566. One our sales representatives will be happy to help you locate hard-to-find parts in our stock or from our vast network of suppliers and manufacturers.

Send to friend
  Order Help Desk
U.S Orders
Your Americanmicrosemi.com Order
 Secure Order Processing
 U.S. Payment Options
Shipping Options
 Shipping Rules & Regulations 		Orders
Lost & Damaged Items
 Additional fees & Limitations
 Product Warranties
Product Alerts
Contact Us
                            HOME                      CATALOG                        CONTACT US                      CART