2N6766 Datasheet pdf specifications specs semiconductor sale at AMS Inc.

Part Number: 2N6766

2N6766

N-channel Enhancement-mode Power Field-effect Transistor. Drain-sourge Voltage 200V. Continuous Drain Current(at Tc 25deg) 30A.

Price: $ 25.31

Special: $ 20.25

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Specifications: Military/High-Rel:NV(BR)DSS (V):200V(BR)GSS (V):20I(D) Max. (A):30I(DM) Max. (A) Pulsed I(D):16@Temp (øC):100#Absolute Max. Power Diss. (W):150Minimum Operating Temp (øC):-55õMaximum Operating Temp (øC):150õThermal Resistance Junc-Case:.83V(GS)th Max. (V):2.0V(GS)th (V) (Min):4.0@(VDS) (V) (Test Condition):20@I(D) (A) (Test Condition):1.0mI(DSS) Max. (A):1.0m@V(DS) (V) (Test Condition):200@Temp (øC) (Test Condition):25I(GSS) Max. (A):100n@V(GS) (V) (Test Condition):20r(DS)on Max. (Ohms):120m@V(GS) (V) (Test Condition):10@I(D) (A) (Test Condition):16g(fs) Min. (S) Trans. conduct.:9.0g(fs) Max; (S) Trans. conduct;:27@V(DS) (V) (Test Condition):15@I(D) (A) (Test Condition):19C(iss) Max. (F):3.0n@V(DS) (V) (Test Condition):25@V(GS) (V) (Test Condition):0.0@Freq. (Hz) (Test Condition):1.0Mtd(on) Max (s) On time delay:35nt(r) Max. (s) Rise time:100nt(d)off Max. (s) Off time:125nt(f) Max. (s) Fall time.:100nPackage Style:TO-3Mounting Style:TMask Programmable ROM

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