Part Number: 2SB1255


2SB1255

Silicon PNP Epitaxial Planar Type Darlington(For Power Amplification)


Price: $ 1.25padSpecial: $ 1.00
Quantity to Order:
Specifications
Military/High-Rel:NV(BR)CEO (V):140V(BR)CBO (V):160I(C) Max. (A):7Absolute Max. Power Diss. (W):3Maximum Operating Temp (øC):150õI(CBO) Max. (A):100u@V(CBO) (V) (Test Condition):160h(FE) Min. Current gain.:5kh(FE) Max. Current gain.:30k@I(C) (A) (Test Condition):7@V(CE) (V) (Test Condition):5f(T) Min. (Hz) Transition Freq:20MÂ@I(C) (A) (Test Condition):500m@V(CE) (V) (Test Condition):10V(CE)sat Max. (V):2.5@I(C) (A) (Test Condition):7@I(B) (A) (Test Condition):7mt(on) Max. (s) On time.:1.0uÂt(s) Max. (s) Storage time.:1.5uÂt(f) Max. (s) Fall time.:1.2uÂSemiconductor Material:SiliconPackage Style:TO-247varMounting Style:TMeasured at 25øC Ambient¾



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