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Part Number: IRC530


IRC530

HEXFET Power MOSFET. Continuous Drain Current 14A @ Tc=25degC - Vgs=10V. Drain-to-source Breakdown Voltage 100V.


Price: $ 0.69padSpecial: $ 0.55
Quantity to Order:
Specifications
V(BR)DSS (V):100V(BR)GSS (V):20I(D) Max. (A):14I(DM) Max. (A) Pulsed I(D):10@Temp (øC):100IDM Max (@25øC Amb):56@Pulse Width (s) (Condition):10uAbsolute Max. Power Diss. (W):88Minimum Operating Temp (øC):-55õMaximum Operating Temp (øC):175õThermal Resistance Junc-Case:1.7Thermal Resistance Junc-Amb.:62V(GS)th Max. (V):4.0V(GS)th (V) (Min):2.0@I(D) (A) (Test Condition):250uI(DSS) Max. (A):250u@V(DS) (V) (Test Condition):80@Temp (øC) (Test Condition):150I(GSS) Max. (A):100n@V(GS) (V) (Test Condition):20r(DS)on Max. (Ohms):160m@V(GS) (V) (Test Condition):10@I(D) (A) (Test Condition):8.4g(fs) Min. (S) Trans. conduct.:4.7@V(DS) (V) (Test Condition):50@I(D) (A) (Test Condition):8.4C(iss) Max. (F):700p@V(DS) (V) (Test Condition):25@Freq. (Hz) (Test Condition):1.0Mtd(on) Max (s) On time delay:9.2nÂt(r) Max. (s) Rise time:42nÂt(d)off Max. (s) Off time:22nÂt(f) Max. (s) Fall time.:25nÂPackage Style:TO-220varMounting Style:TDerating Begins at 100øC–



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