Part Number: IRF250


IRF250

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.



In Stock 1304 Brand New Available from $ 27.68

AMS Internal Partnumber:                               IRF250
List Price: $ 34.59
Our Price: $ 27.68
You Save: $ 6.91

Americanmicrosemi                           Total Price 
$ 27.68

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Specifications
@(VDS) (V) (Test Condition):20
Maximum Operating Temp (øC):150
@V(DS) (V) (Test Condition):160
td(on) Max (s) On time delay:35n
@V(GS) (V) (Test Condition):20
@Temp (øC) (Test Condition):25
@V(DS) (V) (Test Condition):25
Military/High-Rel:N
t(f) Max. (s) Fall time.:130n
Thermal Resistance Junc-Case:.83
Thermal Resistance Junc-Amb.:30
V(BR)DSS (V):200
Absolute Max. Power Diss. (W):150#
g(fs) Min. (S) Trans. conduct.:9.0
V(BR)GSS (V):20
r(DS)on Max. (Ohms):90m
Minimum Operating Temp (øC):-55
C(iss) Max. (F):3.5nÂ
V(GS)th Max. (V):4.0
@V(GS) (V) (Test Condition):10
@V(GS) (V) (Test Condition):0.0
@Freq. (Hz) (Test Condition):1.0M
V(GS)th (V) (Min):2.0
I(D) Max. (A):30
Package Style:TO-204AE
Description:¢
@I(D) (A) (Test Condition):250m
I(DSS) Max. (A):25u
Mounting Style:T
t(d)off Max. (s) Off time:170n
I(GSS) Max. (A):100n
@I(D) (A) (Test Condition):30
t(r) Max. (s) Rise time:190n
I(DM) Max. (A) Pulsed I(D):19
@I(D) (A) (Test Condition):19
@Temp (øC):100
IDM Max (@25øC Amb):120
@V(DS) (V) (Test Condition):15


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