Part Number: DLA900-90-M-F991

NPN silicon planar epitaxial transistor

Availability:      Temporarily out of stock

Lead Time:       5 days

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Specifications

C(obo) (Max) (F):10p
Maximum Operating Temp (øC):125þ
@V(CE) (V) (Test Condition):4.5
V(BR)CBO (V):25
Military/High-Rel:N
V(BR)CEO (V):25
@V(CB) (V) (Test Condition):10
Package Style:TO-98
Absolute Max. Power Diss. (W):200m
@Freq. (Hz) (Test Condition):1.0M
@I(C) (A) (Test Condition):2.0m
@I(C) (A) (Test Condition):Å
I(C) Max. (A):100m
@V(CBO) (V) (Test Condition):18
I(CBO) Max. (A):100n
h(FE) Max. Current gain.:800
Mounting Style:T
h(FE) Min. Current gain.:400

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