Part Number: IRF520


N-channel Enhancement-mode Vertical DMOS Power FET. 100 V - 0.3 Ohm - 8.0 A.

In Stock 8498 Brand New Available from $ 11.50

AMS Internal Partnumber:                               IRF520
List Price: $ 14.38
Our Price: $ 11.50
You Save: $ 2.88

Americanmicrosemi                           Total Price 
$ 11.50

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Military/High-Rel:NV(BR)DSS (V):100V(BR)GSS (V):20I(D) Max. (A):9.2#I(DM) Max. (A) Pulsed I(D):6.5@Temp (øC):100IDM Max (@25øC Amb):37#Absolute Max. Power Diss. (W):60#Minimum Operating Temp (øC):-55õMaximum Operating Temp (øC):150õThermal Resistance Junc-Case:2.5Thermal Resistance Junc-Amb.:80V(GS)th Max. (V):4V(GS)th (V) (Min):2@I(D) (A) (Test Condition):250uI(DSS) Max. (A):250u@V(DS) (V) (Test Condition):100@Temp (øC) (Test Condition):25I(GSS) Max. (A):500n@V(GS) (V) (Test Condition):20r(DS)on Max. (Ohms):270m@V(GS) (V) (Test Condition):10@I(D) (A) (Test Condition):5.6g(fs) Min. (S) Trans. conduct.:2.7g(fs) Max; (S) Trans. conduct;:4.1Â@V(DS) (V) (Test Condition):50@I(D) (A) (Test Condition):5.6C(iss) Max. (F):350pÂ@V(DS) (V) (Test Condition):25@Freq. (Hz) (Test Condition):1Mtd(on) Max (s) On time delay:13nt(r) Max. (s) Rise time:45nt(d)off Max. (s) Off time:29nt(f) Max. (s) Fall time.:30nPackage Style:TO-220ABMounting Style:TBVCES or Punch throughº

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