Part Number: IRF730


IRF730

N-channel Enhancement-mode Power Field-effect Transistor. Drain-sourge Voltage 400V. Continuous Drain Current(at Tc 25deg) 5.5A.



In Stock 2911 Brand New Available from $ 6.20

AMS Internal Partnumber:                               IRF730
List Price: $ 7.75
Our Price: $ 6.20
You Save: $ 1.55
Americanmicrosemi                           Total Price $ 6.20

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Specifications
Military/High-Rel:NV(BR)DSS (V):400V(BR)GSS (V):20I(D) Max. (A):5.5#I(DM) Max. (A) Pulsed I(D):3.5@Temp (øC):100#IDM Max (@25øC Amb):22#Absolute Max. Power Diss. (W):75#Minimum Operating Temp (øC):-55õMaximum Operating Temp (øC):150õThermal Resistance Junc-Case:1.67Thermal Resistance Junc-Amb.:80V(GS)th Max. (V):4V(GS)th (V) (Min):2@I(D) (A) (Test Condition):250uI(DSS) Max. (A):250u@V(DS) (V) (Test Condition):400@Temp (øC) (Test Condition):25I(GSS) Max. (A):500n@V(GS) (V) (Test Condition):20r(DS)on Max. (Ohms):1.0@V(GS) (V) (Test Condition):10@I(D) (A) (Test Condition):3.0g(fs) Min. (S) Trans. conduct.:2.9g(fs) Max; (S) Trans. conduct;:4.4Â@V(DS) (V) (Test Condition):50@I(D) (A) (Test Condition):3.0C(iss) Max. (F):600pÂ@V(DS) (V) (Test Condition):25@Freq. (Hz) (Test Condition):1Mtd(on) Max (s) On time delay:17nt(r) Max. (s) Rise time:29nt(d)off Max. (s) Off time:56nt(f) Max. (s) Fall time.:24nPackage Style:TO-220ABMounting Style:TICER»


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