Part Number: MRF154


600 W, 50 V, N-channel broadband RF power MOSFET

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@Temp (øC) (Test Condition):25
g(fs) Min. (S) Trans. conduct.:16
@V(DD) (V) (Test Condition):50
Efficiency Min.:45Â
P(D) Max. (W):1.3k
@I(D) (A) (Test Condition):20
I(D) Max. (A):60
@Freq. (Hz) (Test Condition):30M
I(DSS) Max. (A):20m
@V(DD) (V) (Test Condition):50
@I(D) (A) (Test Condition):100m
@I(D) (A) (Test Condition):800m
g(fs) Max; (S) Trans. conduct;:20Â
@I(D) (A) (Test Condition):800m
@V(DS) (V) (Test Condition):50
@V(DS) (V) (Test Condition):10
Operating Power Output Typ.(W):600
Power Gain Min. (dB):17Â
@Freq. (Hz) (Test Condition):30M
V(BR)GSS (V):40
V(BR)DSS (V):125
Semiconductor Material:Silicon
Maximum Operating Temp (øC):200õ

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